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KCT8102L

Introduction
KCT8102L is a highly-integrated, RF Front-End Integrated Circuit which incorporates key RF functionality needed for a TDD-mode operating in the 860M~930MHz ISM frequency bands. KCT8102L is integrated with a power amplifier (PA), a low noise amplifier (LNA) with bypass, and a single-pole, double-throw (SPDT) switch all in one device. KCT8102 is designed for ease of use and maximum flexibility, with different matching circuits, KCT8102L could achieve high power and high efficiency two operation status.
 
KCT8102L has simple and low-voltage 1.6 to 3.6V control logic, and wide supply voltage range from 3.0 to 5.25V allowing the KCT8102L to be used in battery powered applications.
 
KCT8102L is assembled in a compact, low-profile 3x3x0.77mm 16-lead LGA package. KCT8102L is the ideal RF front-end solution for implementing sub-GHz from 860M~930MHz supporting multiple standards including LP-WAN (LoRa, Sigfox, etc.), Wi-SUN, and other loT applications.
Specifications
Integrated high-performance 860~930MHz Front-End Module
Nominated voltage at 3.3V&4.2V&5V
+32.5dBm saturated output power at 5.0V High Power Matching
+31.0dBm saturated output power at 5.0V High Efficiency Matching
+31.0dBm saturated output power at 4.2V High Power Matching
+29.5dBm saturated output power at 4.2V High Efficiency Matching
+29.0dBm saturated output power at 3.3V High Power Matching
+27.5dBm saturated output power at 3.3V High Efficiency Matching
Integrated LNA with noise figure of 1.7dB at 5V&4.2V&3.3V
Receive bypass path with low loss: 2.0dB at 5V4.2V&3.3V
Support external Receive filter
ESD Protection Circuitry on All Ports
Small package: LGA-16L, 3×3×0.77mm (MSL3, 260°C per JEDEC J-STD-020)
RoHS and REACH Compliant